Spin-valve magnetoresistive thin film element

摘要

A dual spin-valve magnetoresistive thin film elements includes a first dual pinned magnetic layer and a second dual pinned magnetic layer. A first pinned magnetic layer of the first dual pinned magnetic layer contacts a first antiferromagnetic layer and a second pinned magnetic layer of the first dual pinned magnetic layer contacts a first nonmagnetic electrically conductive layer. The first pinned magnetic layer of the second dual pinned magnetic layer contacts a second antiferromagnetic layer and the second pinned magnetic of the second dual pinned magnetic layer contacts a second nonmagnetic electrically conductive layer. A synthesized magnetic moment of the first pinned magnetic layer and the second pinned magnetic layer in the first dual pinned magnetic layer, and a synthesized magnetic moment the first pinned magnetic layer and the second pinned magnetic layer in the second dual pinned magnetic layer face in opposite directions.