OXIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a light-emitting device which exhibits excellent electrical and light-emitting properties and to provide its manufacturing method. SOLUTION: A ZnO light-emitting diode 100 is provided with a p-ZnO layer 103 and a p-type ohmic electrode 105 which is formed on the p-ZnO layer 103. The p-type ohmic electrode 105 is made of Ni.