| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-efficiency light emitting element. SOLUTION: Ruggedness is formed on the side face of at least a light emitting layer of the light emitting element. An n-type layer 103, the light emitting layer 104 and a p-type layer 105 in which III nitride compound semiconductor or the like is formed on a sapphire substrate 101 are sequentially formed by an MOVPE method or the like. A dry etching step is conducted until the layer 103 for forming a trapezoidal electrode 108 is exposed. In this etching step, a waveshape-like etching pattern is adopted on the layer 105. The ruggedness is formed on the side face by etching the pattern. A planar direction range of the crystal interface of the side face is extended by the rugged side face 109, and the area is increased to improve light pickup efficiency. That is, external quantum efficiency is increased to obtain the high-efficiency light emitting element. |
