发明名称 |
PHOTOMASK, ITS MANUFACTURING METHOD AND METHOD FOR FORMING MAGNETIZATION PATTERN |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photomask on which a mask pattern is formed with high accuracy. SOLUTION: In exposing procedures of a manufacturing method for the photomask having a process for forming a photoresist layer 13 on a transparent substrate base 10 having an energy ray shielding material layer 12 before an etching processing, a process for forming a resist pattern 13A by developing a latent image pattern after forming it by irradiating the photoresist layer 13 with an energy ray, a process for etching the energy ray shielding material layer 12 and a process for removing the resist 13A, a latent image 13b for diffraction slit is formed in a transmission area 15 without the energy ray shielding material layer 12 in outer peripherals of a mask pattern area by photoresist. The latent image 13b for diffraction slit is irradiated with laser beam 21 from the bottom of the transparent substrate base 10, a developer is supplied as detecting zero-order, 1st-order or 2nd-order diffracted lights and development is stopped at a point of time when light quantity ratio between diffracted lights becomes prescribed one.</p> |
申请公布号 |
JP2003107667(A) |
申请公布日期 |
2003.04.09 |
申请号 |
JP20010302024 |
申请日期 |
2001.09.28 |
申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
KONDO SHIROJI;HARADA SHIGENOBU |
分类号 |
G03F1/54;G03F7/20;G11B5/02;G11B5/84;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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