| 摘要 |
A quantum tunneling transistor which provides two switching inputs, for example source and drain as with a conventional FET, and a control input which, in one embodiment, performs much like the gate input of a conventional FET. In one embodiment, charge pump circuitry is integrated onto the semiconductor substrate material of the transistor to provide a plurality of switching voltages to the transistor. The circuitry is configured such that switching of the transistor is controlled by a single, high impedance input, thus allowing the use of the quantum tunneling transistor in existing applications.
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