| 摘要 |
PURPOSE: Provided are a chemically amplified photoresist sensitive to far-ultraviolet light in wavelength equal to or less than 220 nanometers, a polymer used for producing the chemically amplified resist, a monomer for producing the polymer, and a method for transferring a pattern to a chemically amplified resist layer. CONSTITUTION: The monomer for a chemically amplified photoresist comprises vinyl monomer having 3-oxo-4-oxabicyclo£3.2.1|octane-2-yl group represented by general formula 1(wherein each of L1, L2, L3, L4, L5 and L6 is selected from the group consisting of hydrogen atom and alkyl groups having C1-C8). The method for transferring a pattern to a photoresist layer, comprises the steps of (i) preparing a substrate having at least one layer and photoresist comprising polymer containing the above vinyl polymer, and a photo-acid generator generating acid in the presence of light equal in wave-length to or less than 220 nanometers, provided that the ratio of the photo-acid generator to the photoresist is the range from 0.2-30 mass%; (ii) spreading the photoresist on the layer for forming a photoresist layer; (iii) exposing the photoresist layer to image-carrying light having a wave-length between 180 nanometers and 220 nanometers for forming a latent image in the photoresist layer; and (iv) developing the latent image so as to pattern the photoresist layer into a photoresist patterned layer.
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