| 摘要 |
A method of doping a compound semiconductor layer n-type during epitaxial growth of the compound semiconductor layer includes supplying source materials including respective elements of a compound semiconductor material to a heated monocrystalline substrate, epitaxially growing a layer of the compound semiconductor material on the heated substrate and, simultaneously, supplying SiI4 as a dopant source material including silicon to the heated substrate, incorporating silicon as a dopant impurity producing n-type conductivity into the compound semiconductor layer during the epitaxial growth. <IMAGE> |
