发明名称 |
METHOD FOR MAKING AN ACTIVE PIXEL SENSOR |
摘要 |
A plurality of active pixel sensors are formed on the surface of a semiconductor wafer. The semiconductor wafer comprises a P-type substrate, an active pixel sensor region and a periphery circuit region. A first active pixel sensor block mask (APSB mask) is formed to cover the active pixel sensor region, then at least one N-well on the surface of the semiconductor wafer not covered by the first APSB mask is formed. A second APSB mask and at least one N-well mask are formed to cover the active pixel sensor region and the region outside the P-well region. At least one P-well on the surface of the semiconductor wafer not covered by the second APSB mask and the N-well mask is formed. Finally, at least one photodiode and at least one complementary metal-oxide semiconductor (CMOS) transistor are formed on the surface of the active pixel sensor region.
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申请公布号 |
US2003049896(A1) |
申请公布日期 |
2003.03.13 |
申请号 |
US20010682477 |
申请日期 |
2001.09.07 |
申请人 |
CHEN CHONG-YAO;LIN CHEN-BIN;LIU FENG-MING |
发明人 |
CHEN CHONG-YAO;LIN CHEN-BIN;LIU FENG-MING |
分类号 |
H01L21/82;H01L21/8234;H01L21/8238;H01L27/14;H01L27/146;H01L31/00;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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