Method of forming multi-layers for a thin film transistor (TFT) and the device formed thereby

摘要

The present invention concerns a method of forming multi-layers such as base-coat and active layers for TFTs. In accordance with the preferred embodiment of the present invention, a first layer is formed on a transparent substrate using a physical vapor deposition. And a second layer is sequentially formed using a physical vapor deposition on the first layer without breaking vacuum. The present invention simplifies the TFT fabrication while decreasing the water or hydrogen content within multilayers including a base-coat (BC) layer.