TREATING DEVICE AND CLEANING METHOD THEREFOR

摘要

After an SiOC:H film is formed, the cleaning of the interior of a chamber (11) starts. NF3 and O2 fed from an NF3 source (S1) and an O2 source (S2) are turned into plasma inside an activator (12) on a cleaning gas line (L1), and radicals in the plasma is selectively fed into the chamber (11). Fluorine and oxygen radicals in the cleaning gas remove an Si−containing matter and a C−containing matter deposited to the interior of the chamber (11).