| 摘要 |
PURPOSE: A TFT substrate fabricating method is provided to simultaneously form spacers with contact holes via the patterning of the contact holes with respect to an organic insulating film, thereby removing photoetching steps for forming the spacers. CONSTITUTION: A TFT substrate fabricating method includes the steps of forming gate wires including gate lines and gate electrodes on a substrate, forming a gate insulating film covering the gate wires, forming a semiconductor pattern on the gate insulating film, forming data wires including data lines, and source/drain electrodes on the gate insulating film and the semiconductor pattern, forming an organic insulating film(70) with a protrusion pattern of a first thickness for serving as spacers(71) and contact holes exposing the drain electrodes on the semiconductor pattern, all parts except the protrusion pattern and the contact holes being of a second thickness, and pixel electrodes(82) formed on the organic insulating film to be connected to the drain electrodes(66) via the contact holes.
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