LOW-VOLTAGE AND INTERFACE DAMAGE-FREE POLYMER MEMORY DEVICE,申请号US2002020644-传众专利搜索

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发明名称	LOW-VOLTAGE AND INTERFACE DAMAGE-FREE POLYMER MEMORY DEVICE
摘要	<p>One embodiment of the invention relates to a polymer memory device and a method of making it. The polymer memory device may include a composite or single layer of a ferroelectric polymer memory that addresses surface engineering needs according to various embodiments. The ferroelectric polymer memory structure may include crystalline ferroelectric polymer layers such as single and co-polymer compositions, The structure may include spin-on and/or Langmuir- Blodgett deposited compositions. One embodiment of the invention relates to a method making embodiments of the polymer memory device. One embodiment of the invention relates to a memory system that allows the polymer memory device to interface with various existing hosts.</p>
申请公布号	WO2003003377(A2)	申请公布日期	2003.01.09
申请号	US2002020644	申请日期	2002.06.28
申请人		发明人
分类号		主分类号
代理机构		代理人
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