| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for vapor phase epitaxy, which can effectively grow a uniform semiconductor film having adequate crystallinity on a substrate through vapor phase epitaxy, both when performing vapor phase epitaxy on a large-scale substrate or simultaneously on several substrates, and when performing the vapor phase epitaxy set at high temperature, in a vapor phase epitaxy with the use of a horizontal type reaction tube. SOLUTION: The apparatus for vapor phase epitaxy comprises a press- down-gas introducing portion on a wall part of a reaction tube facing to the substrate, and that at least one part of an upstream part in the source gas channel of the press-down-gas introducing portion feeds the press-down gas toward a downstream direction of the source gas channel, in an obliquely lower direction or in a horizontal direction. The method for vapor phase epitaxy includes feeding the press-down gas as well as feeding gas containing the source gas, into the above horizontal type reaction tube of the apparatus for vapor phase epitaxy. |
