| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method which can activate impurity elements doped in a semiconductor film and capture harmful impurities in a semiconductor film by a heat treatment in a short time without deformation of a substrate, in a manufacturing process of a semiconductor device using a low heat resistance substrate such as a glass substrate, and to provide a heat treatment apparatus which can realize such a heat treatment. SOLUTION: This heat treatment apparatus comprises a means for feeding a gas from the upstream side of a reactive pipe, a means for heating the gas in the upstream side, a means for holding the substrate to be treated in the downstream side of the reactive pipe, and a means for circulating the gas from the downstream side of the reactive pipe to the upstream side. Since the gas used for heating the substrate to be treated is made to circulate, the electric power for heating the gas can be saved. The circulating gas may be exhausted partly, and also it can be utilized as a heat source for preheating a newly introduced gas.
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