| 摘要 |
<p>A method of fabricating an interconnect for a semiconductor device is disclosed. The method comprises: forming a dielectric layer on a semiconductor substrate; forming a trench in the dielectric layer; placing the semiconductor substrate in a plasma deposition chamber having a tantalum target; initiating a plasma in the presence of nitrogen in the plasma deposition chamber; and depositing an ultra-thin layer comprising tantalum and nitrogen in the trench.</p> |
