发明名称 PASSIVATION LAYER FOR MOLECULAR ELECTRONIC DEVICE FABRICATION
摘要 A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a passivation layer is provided to protect a molecular layer form degradation during patterning of the top wire layer. A molecular electronic device structure and a memory system that are formed from this fabrication process are described.
申请公布号 WO02078056(A2) 申请公布日期 2002.10.03
申请号 WO2002US08934 申请日期 2002.03.21
申请人 HEWLETT-PACKARD COMPANY 发明人 CHEN, YONG
分类号 H01L29/06;G11C13/02;H01L21/768;H01L27/00;H01L27/10;H01L27/28;H01L29/66;H01L51/00 主分类号 H01L29/06
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