| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polycrystalline silicon thin film of a large size. SOLUTION: The depositing method of the polycrystalline thin film Si includes a process for depositing an amorphous Si thin film serving as a base on a substrate, a process for forming a metal oxide film on the surface of the amorphous Si thin film, a process for partially reducing the metal oxide film, a process for forming silicide by reduced metal and amorphous Si, and a process for growing crystal Si with silicide as a core.</p> |
