发明名称 Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry
摘要 Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filed with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.
申请公布号 US2002132419(A1) 申请公布日期 2002.09.19
申请号 US20020125977 申请日期 2002.04.19
申请人 ROLFSON J. BRETT;MANNING MONTE 发明人 ROLFSON J. BRETT;MANNING MONTE
分类号 H01L21/02;H01L21/768;H01L21/8244;H01L27/11;(IPC1-7):H01L21/824 主分类号 H01L21/02
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