Ferroelectric memory device and method for fabricating the same

摘要

The ferroelectric memory device has a plurality of capacitor elements (30) each formed on a semiconductor substrate (11) and composed of a lower electrode (15), a capacitor insulating film (17) made of a ferroelectric material (PZT or SBT for example) formed on the lower electrode, and an upper electrode (18) formed on the capacitor insulating film. Each of the lower electrodes is buried in a burying insulating film (16) to have an upper surface planarized relative to the upper surface of the burying insulating film (16) and has a plane configuration such that the distance from an arbitrary position on the upper surface of the lower electrode to the nearest end portion thereof is 0.6µm or less.