STRUCTURE OF BONDING PAD OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A structure of a bonding pad of a semiconductor device and a method for fabricating the same are provided to prevent an escaping phenomenon from a lower film by improving a structure of a bonding pad. CONSTITUTION: An insulating layer(100) is formed on a conductive layer of a semiconductor substrate. An auxiliary layer(110) is formed on the insulating layer(100). A groove(111) is formed on the auxiliary layer(110). An insulating layer pattern(120) is formed on the auxiliary layer(110). A bonding pad(130) is formed by a conductive film. The bonding pad(130) is formed on the insulating layer pattern(120). A contact hole of the insulating layer pattern(120) and the groove(111) of the auxiliary layer(110) are filled by the bonding pad(130). Edge parts of the bonding pad(130) are supported by the insulating layer pattern(120). A protective layer(140) is formed on the insulating layer pattern(120) and the bonding pad(130).