BIT LINE VOLTAGE REGULATION CIRCUIT

摘要

PURPOSE: A bit line voltage regulation circuit is provided to minimize a variation of voltage applied to a drain by rectifying dynamically output voltage of a boosting circuit. CONSTITUTION: A boosting circuit(12) generates high voltage applied to a selected bit line in order to drive a memory cell array(11). An NMOS transistor(N11) is connected between an output terminal of the boosting circuit(12) and the bit line. The NMOS transistor(N11) is used for transferring output voltage of the boosting circuit(12) to the bit line. An amplifier(13) detects voltage drop due to resistances(Rd,Rx) and amplifies the dropped voltage when the output voltage of the boosting circuit(12) is transferred to the bit line. In addition, the amplifier(13) controls the NMOS transistor(N11) by using the amplified voltage. The amplified voltage is the sum of the minimum voltage applied to the bit line and a threshold voltage of the bit line.