| 摘要 |
PURPOSE: A metal interconnection formation method of semiconductor devices is provided to prevent a contact failure by using an SOG(Silicon On Glass) film. CONSTITUTION: After forming a metal interconnection(21) on a substrate, a first interlayer dielectric(22) is formed on the resultant structure. An SOG film(23) is formed on the first interlayer dielectric, and the SOG film(23) is then baked. Source gases containing boron ions are implanted into the baked SOG film(23). The doped SOG film is annealed. Then, a second interlayer dielectric(24) is formed on the SOG film. A contact hole is formed by sequentially etching the second interlayer dielectric, the SOG film and the first interlayer dielectric. An aluminum plug(27) is formed in the contact hole.
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