发明名称 |
Positive resist composition and positive resist base material using the same |
摘要 |
A positive resist composition comprising: (A) a compound which generates an acid upon irradiation with active light or radiant ray, and (B) a resin which exhibits increased solubility in an alkali by action of an acid and includes a copolymer including (b-1) 40% to 85% by mole of a unit having an alkali-soluble group, (b-2) 3% to 25% by mole of a unit having (i) an acid-decomposable dissolution-inhibiting group and (ii) a group which accelerates dry-etching resistance, and (b-3) 3% to 40% by mole of a unit having an acid-decomposable dissolution-inhibiting group and being other than the units (b-1) and (b-2). This composition is a chemically amplified positive resist composition that can be applied to a resist having a reduced thickness, is excellent in dry-etching resistance and definition and can form a patterned resist with a good sectional shape.
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申请公布号 |
US2002076649(A1) |
申请公布日期 |
2002.06.20 |
申请号 |
US20010994890 |
申请日期 |
2001.11.28 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
KUMON SATOSHI;YUKAWA HIROTO |
分类号 |
C08F212/14;C08K3/32;C08K5/00;C08K5/09;C08K5/17;C08K5/51;C08L101/02;G03F7/004;G03F7/039;G03F7/11;(IPC1-7):G03F7/039;G03F7/30 |
主分类号 |
C08F212/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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