| 摘要 |
A method is described in which a metal oxide-containing layer is applied to a substrate and is then exposed to implantation with oxygen ions. A subsequent heat-treatment step can be carried out in an inert atmosphere and with shorter process times, since the oxygen is already present in the metal oxide-containing layer and, moreover, shorter diffusion paths are required for the oxygen to become intercalated in the crystal lattice of the metal oxide-containing layer. Therefore, adjacent layers, such as barrier layers, are less affected by the heat treatment.
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