METHOD FOR FABRICATING SCHOTTKY DIODE

摘要

PURPOSE: A method for fabricating a schottky diode is provided to control generation of a defect like a mark, by forming a chemical oxide layer on the exposed surface of an epitaxial layer in a cleaning process. CONSTITUTION: A high density semiconductor substrate(100) is of the first conductivity type. The epitaxial layer(110) of the same conductivity type as the semiconductor substrate is formed on the high density semiconductor substrate. An oxide layer pattern is formed on the epitaxial layer. The chemical oxide layer(140) is formed on the surface of the epitaxial layer exposed by the oxide layer pattern while a cleaning process is performed. A metal electrode pattern is formed on the oxide layer pattern and the chemical oxide layer pattern. A silicide layer is formed between the epitaxial layer and the metal electrode pattern by a heat treatment process while the chemical oxide layer pattern is eliminated.