发明名称 |
Isotropic resistor protect etch to aid in residue removal |
摘要 |
Various methods of fabricating a circuit structure, such as a gate electrode or a resistor are provided. In one aspect, a method of fabricating a circuit structure is provided that includes forming a silicon structure on a substrate and forming an oxide film on the silicon structure. A first portion of the oxide film is masked while a second portion is left unmasked. The second portion of the oxide film is removed by isotropic plasma etching to expose a portion of the silicon structure, and the first portion of the oxide film is unmasked. Use of isotropic etching for removal of a resistor protect oxide reduces the potential for isolation structure damage due to aggressive overetching associated with conventional anisotropic etching techniques.
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申请公布号 |
US6365481(B1) |
申请公布日期 |
2002.04.02 |
申请号 |
US20000660724 |
申请日期 |
2000.09.13 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BONSER DOUGLAS J.;PURDY MATTHEW |
分类号 |
H01L27/04;H01L21/02;H01L21/311;H01L21/822;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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