发明名称 |
CIRCUIT STRUCTURE FOR CORRECTING DIFFERENT VOLTAGE IN EACH LINE SECTION IN SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a simple circuit structure which corrects different voltages between respective line sections in a semiconductor integrated circuit, especially a circuit structure which corrects difference between the bit line voltage of a high level and the plate line voltage of a high level of a ferroelectric RAM memory and in which the different voltages (write voltage and read voltage in particular) are corrected with a standard operation and can mutually independently be decided in a test mode. SOLUTION: A voltage correction transistor is provided between a bit line and a plate line in order to solve the above problem.
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申请公布号 |
JP2002025248(A) |
申请公布日期 |
2002.01.25 |
申请号 |
JP20010195517 |
申请日期 |
2001.06.27 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ESTERL ROBERT;MANYOKI ZOLTAN |
分类号 |
G11C11/22;G11C29/12;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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