发明名称 CIRCUIT STRUCTURE FOR CORRECTING DIFFERENT VOLTAGE IN EACH LINE SECTION IN SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a simple circuit structure which corrects different voltages between respective line sections in a semiconductor integrated circuit, especially a circuit structure which corrects difference between the bit line voltage of a high level and the plate line voltage of a high level of a ferroelectric RAM memory and in which the different voltages (write voltage and read voltage in particular) are corrected with a standard operation and can mutually independently be decided in a test mode. SOLUTION: A voltage correction transistor is provided between a bit line and a plate line in order to solve the above problem.
申请公布号 JP2002025248(A) 申请公布日期 2002.01.25
申请号 JP20010195517 申请日期 2001.06.27
申请人 INFINEON TECHNOLOGIES AG 发明人 ESTERL ROBERT;MANYOKI ZOLTAN
分类号 G11C11/22;G11C29/12;(IPC1-7):G11C11/22 主分类号 G11C11/22
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