| 摘要 |
The present invention provides a method for making a HVMOS transistor on a SOI substrate. The method according to the present invention involves forming a plurality of shallow trench isolations (STI) and at least one active area isolated by each shallow trench isolation on the SOI substrate. Then, two unneighboring field oxide layers and a gate are formed on the surface of the active area, with a portion of the gate covering the two field oxide layers. Thereafter, two double diffuse drains(DDD) are formed on the surface of the active area not covered by the gate and the two field oxide layers. Finally, a drift region of the HVMOS transistor is formed at the bottom of the two field oxide layers.
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