| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor capable of preventing a short circuit due to voids in an interlayer insulation film between the wirings of the aspect ratio of 2.5 or more. SOLUTION: A contact hole 8 is opened between gate electrodes 3a, 3b. Then, the void 7 is exposed on the side wall in the contact 8. Thereafter the thin insulation film 11 of about 10-60 nm is formed so as to block the void 7 on the whole face, etch back is performed on the whole face, and a side wall 12 comprising the thin film 11 is formed on only the side wall of the contact holes 8, 8a, 8b.
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