| 摘要 |
A method for forming a contact is provides that can minimize junction leakage. In this method, A contact hole is opened in an insulating layer to expose an impurity diffusion layer in a semiconductor substrate. A silicide layer is then selectively formed on the bottom of the contact hole, i.e., over the impurity diffusion layer. Impurity ions are then implanted into the impurity diffusion layer through the silicide layer so as to reduce contact resistance. The remainder of the contact hole is then filled with metal. Because of the presence of the silicide layer, ion implanting damages is confined to within the suicide layer, and there is no damage to the underlying impurity diffusion layer. As a result, silicon substrate defects can be minimized and a reliable junction without junction leakage can be obtained.
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