| 摘要 |
PROBLEM TO BE SOLVED: To provide a coating composition yielding a coated film which has a uniform thickness and has an excellent hardness, crack resistance and CMP resistance and a low dielectric constant. SOLUTION: A film-forming composition contains, based on 100 pts.wt. silicon compounds (A) of formulae (1): R1aSi(OR2)4-a and (2): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c, from 0.0005 to 0.05 pts.wt. metal chelated compound (B) of formula (3): R8eM(OR9)f-e wherein R1 is hydrogen, fluorine or a monovalent organic group; R2, R3, R4, R5 and R6 are each a monovalent organic group; a, b and c are each an integer of 0-2; R7 is an oxygen atom or a -(CH2)m- group; m is 1-6; d is 0 or 1; R8 is a chelating agent; M is a metal atom; R9 is a 2-5C alkyl group or a 6-20C aryl group; e is a valence number of the metal M; and f is integer of from 1 to e.
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