| 摘要 |
A semiconductor light emitting device includes a lead frame made of a material having a thermal conductivity not higher than 100 W/(m.K), and a gallium nitride compound semiconductor light emitting element mounted on the lead frame. Alternatively, the semiconductor light emitting device includes a lead frame, a gallium nitride compound semiconductor light emitting element mounted on the lead frame, wires connecting electrode terminals of the lead frame to the light emitting element, a first encapsulater provided around the light emitting element to cover it, and a second encapsulater provided around the first encapsulater to cover it. Each wire has a larger diameter at one end portion thereof connected to the light emitting element than that of its major part, and the first encapsulater is provided so that its surface extends across the end portions.
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