| 摘要 |
PROBLEM TO BE SOLVED: To lower the processing temperatures for crystallizing, oxidating and reforming a capacitor insulation film. SOLUTION: MISFETs Qs, Qn, Qp are formed on a main surface of a semiconductor substrate 1, a silicon nitride film 50 and a silicon oxide film 51 are deposited onto a silicon oxide film 46, e.g. polycrystalline silicon film-made lower electrodes 55 are formed in holes 52, a silicon nitride film 56 is formed by e.g. the thermal nitrification method on the lower electrodes 55, and then an amorphous tantalum oxide film is deposited by the CVD method, heat treated in an atomic oxygen-containing atmosphere to crystallize the tantalum oxide film and processed to replenish (recover) oxygen defects. |
