| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer treatment system which is monitored selectively and a monitoring method for the wafer treatment processes. SOLUTION: A wafer treatment system includes a wafer treatment chamber 22 which includes support bodies which arrange the wafer in an internal region of the treatment chamber 22, a wafer treatment mechanism including a means in which the plasma is transferred into the treatment chamber 22 to eliminate a membrane from as exposed surface 136 of the wafer, and a light-receiving device 140 which is equipped in the treatment chamber 22 to monitor densities of the plasma which is focused near the wafer surface and a reaction product of the membrane. To optimize an optical detecting device 110 for ashing terminal point detecting using a spectrometer, the point of completion terminal is recognized by monitoring the densities of the plasma on the wafer surface and the product of the membrane, by correcting the light from the region, having the strongest light. |
