| 摘要 |
PROBLEM TO BE SOLVED: To provide a NAND type flash memory cell and a producing method therefor. SOLUTION: This NAND type flash memory cell is provided with a plurality of mutually parallel device isolation films formed in a prescribed area of a wafer, mutually parallel string selection and ground selection line patterns across an active area between the plurality of device isolation films, plural word line patterns located between the string selection line pattern and the ground selection line pattern, source area formed in an active area on the opposite side of the string selection line pattern adjacently with the ground selection line pattern, drain area formed in an active area on the opposite side of the ground selection lien pattern, and common source line located parallel with the ground selection line pattern on the device isolation film between the source areas and electrically connected with the source areas.
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