METHOD FOR FORMING TEST PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a test pattern of a semiconductor device is provided to obviate problems generated when a test pattern formed on a scribe line is different from a test pattern formed within a cell. CONSTITUTION: The first structure(302) is etched on a chip region and the second structure(304) is etched on a test pattern region by using a PR mask to form patterns(310a,310b). The PR mask is removed. The operation pattern(310a) of a semiconductor device is formed on an upper part of the first structure. The test pattern(310b) is formed on an upper part of the second structure to test the semiconductor device. The operation pattern(310a) and the test pattern(310b) are formed to have the same size according to the PR pattern on the PR mask. The etching process is determined according to a process forming the first structure(302) and the second structure(304). A wet etching or a dry etching can be proceeded. Therefore, a difference of focus between the chip region and the test pattern region can be removed.