发明名称 Precharging apparatus and method in a semiconductor memory device
摘要 A precharging apparatus and method is applicable to a semiconductor device having a stack bank-type structure. The device comprises a plurality of memory cell array banks, a plurality of memory cell array blocks of each memory cell array bank comprising a predetermined number of partial blocks connected respectively to the predetermined number of groups of the plurality of partial local data input/output line pairs, in turn connected respectively to the predetermined number of groups of the plurality of global data input/output line pairs, a plurality of switching means which are connected respectively between the predetermined number of groups of the plurality of partial local data input/output line pairs and which are used to connect the predetermined number of groups of the plurality of partial local data input/output line pairs in response to a precharge signal, and a predetermined number of precharge means to precharge the predetermined number of groups of the plurality of partial local data input/output line pairs of each memory cell array block in response to the precharge signal. In this manner, the overall chip size can be reduced by reducing the number of transistors used during a precharge operation.
申请公布号 US6256245(B1) 申请公布日期 2001.07.03
申请号 US20000634058 申请日期 2000.08.09
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 KWAK JIN SEOK
分类号 G11C11/409;G11C7/10;G11C7/12;G11C11/401;(IPC1-7):G11C7/00 主分类号 G11C11/409
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