发明名称 Non-linear voltage-dependent resistor used in switching circuits contains silicon carbide particles doped with aluminum or boron
摘要 Non-linear voltage-dependent resistor contains silicon carbide particles doped with aluminum or boron. Independent claims are also included for: (a) a process for the production of the resistor comprising mixing the silicon carbide particles with aluminum or boron, and heat treating in an oxidizing atmosphere to form a metal oxide crystal phase and a silicon dioxide crystal phase; and (b) a varistor (1) comprising the above resistor (2) and varistor connections (3, 4). Preferred Features: The surfaces of the doped silicon carbide particles are oxidized.
申请公布号 DE10056734(A1) 申请公布日期 2001.06.13
申请号 DE20001056734 申请日期 2000.11.10
申请人 MURATA MFG. CO., LTD. 发明人 KAMOSHIDA, YUKIHIRO;NAKAMURA, KAZUTAKA
分类号 H01C7/10;H01C7/118;(IPC1-7):H01C7/118 主分类号 H01C7/10
代理机构 代理人
主权项
地址