发明名称 |
Non-linear voltage-dependent resistor used in switching circuits contains silicon carbide particles doped with aluminum or boron |
摘要 |
Non-linear voltage-dependent resistor contains silicon carbide particles doped with aluminum or boron. Independent claims are also included for: (a) a process for the production of the resistor comprising mixing the silicon carbide particles with aluminum or boron, and heat treating in an oxidizing atmosphere to form a metal oxide crystal phase and a silicon dioxide crystal phase; and (b) a varistor (1) comprising the above resistor (2) and varistor connections (3, 4). Preferred Features: The surfaces of the doped silicon carbide particles are oxidized.
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申请公布号 |
DE10056734(A1) |
申请公布日期 |
2001.06.13 |
申请号 |
DE20001056734 |
申请日期 |
2000.11.10 |
申请人 |
MURATA MFG. CO., LTD. |
发明人 |
KAMOSHIDA, YUKIHIRO;NAKAMURA, KAZUTAKA |
分类号 |
H01C7/10;H01C7/118;(IPC1-7):H01C7/118 |
主分类号 |
H01C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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