METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR, MEMORY CELL USING THE SAME AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A metal-oxide-semiconductor field effect transistor(MOSFET) is provided to control a short channel effect such as a punch-through effect as an integration degree of a semiconductor device increases, by making a source and a drain have a step difference wherein the source and drain have different height. CONSTITUTION: The first active region and an isolating region are separated by a field insulating layer in a semiconductor substrate(100) of the first conductivity type. The semiconductor substrate has the first and second surfaces and a surface connecting the first and second surfaces. The first surface is not etched, formed by etching a predetermined region. The second surface is formed by an etching process, in parallel with the first surface. The first gate(114a) is formed across the semiconductor substrate having multi surfaces. A source/drain region(117) is formed under the first and second surfaces adjacent to the gate. The first contact(119) is composed of a conductive material formed on the source/drain region.