| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to compensate a misalign of masks by forming a step-shaped contact hole using O2 plasma. CONSTITUTION: After forming gate electrode patterns(42) on a silicon substrate(40) having a field oxide(41), a first contact hole is formed by forming a first insulating layer(45') on the resultant structure and patterning the first insulating layer(45') using a photoresist pattern. The first insulating layer(45') adjacent to the upper edges of the first contact hole is exposed by partially etching the photoresist pattern using O2 plasma. By partially etching the exposed first insulating layer(45'), a step-shaped contact hole(D) is formed. Then, a plug pad is formed by filling a conductive layer into the step-shaped contact hole.
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