发明名称 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby |
摘要 |
A semiconductor device having a carbon-containing region with an advantageous concentration profile is disclosed. The carbon is introduced into a region of the substrate and at a depth below the space-charge layer of the device and at a concentration such that the carbon atoms absorb point defects created in the substrate during device fabrication but do not adversely affect the leakage characteristics of the device.
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申请公布号 |
US6153920(A) |
申请公布日期 |
2000.11.28 |
申请号 |
US19980015981 |
申请日期 |
1998.01.30 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
GOSSMANN, HANS-JOACHIM LUDWIG;RAFFERTY, CONOR STEFAN |
分类号 |
H01L21/205;H01L21/22;H01L21/265;H01L29/08;H01L29/10;H01L29/167;H01L29/786;(IPC1-7):H01L29/167 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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