| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to control the depth of a wiring groove with good accuracy without using an etching stopper, such as a silicon nitride film, and to contrive to enhance the quality of a buried wiring. SOLUTION: A first interlayer insulating film 12, which is a layer 20 with the silicon-rich uppermost surface, is deposited on a conductor film 11, and a second interlayer insulating film 13 is deposited on this film 12. After that, the films 12 and 13 are etched and a through hole 15 is formed in the film 12. Then the plasma impedance during etching is monitored to detect the silicon- rich layer 20, whereby etching is made to stop and a wiring groove 17 is formed in the film 13.
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