| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, with which a shallow source/drain diffusion layer can be formed using a low temperature process, and a low resistance element can be obtained. SOLUTION: After the crystal condition on the surface of a substrate 1 has been brought into a turbulent state, impurity ions for the formation of a source/ drain diffused layer 6 are implanted to a depth equal to or deeper than the layer whose crystal condition is disturbed. By performing annealing treatment for the activation of impurities at a low temperature (500 to 650 deg.C), the impurities in the crystal disturbed layer is activated, but the impurities at positions deeper than this are not activated. In other words, the depth of the junction of the source/drain diffused layer 6 can be controlled with the depth of the crystal confused layer, and a shallow junction can be obtained easily.
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