CIRCUIT FOR MEASURING HOT CARRIERS

摘要

PURPOSE: A circuit for measuring hot carriers is provided to analyze hot carrier characteristic of a measurement device by generating pulse signals having various duty ratios in a silicon chip. CONSTITUTION: A circuit for measuring hot carriers comprises: a pulse signal generator(10) for generating a plurality of pulse signals having a variety of duty ratios and desired frequencies in a silicon chip; a level shifter(20) for converting the pulse signals into a desired voltage levels; and a measurement device(30). The measurement device is configured of one of a MOSFET, MESFET and bipolar transistor. The pulse signal generator has a ring oscillator constructed of at least three inverters, and at least two NAND gates NANDing the outputs of two different inverters among the inverters to generate at least two pulse signals which are overlapped by a predetermined portion and have various duty ratios. Each inverter of the ring oscillator is configured of a PMOS transistor and an NMOS transistor. The source of the PMOS transistor or NMOS transistor is connected to a load transistor controlled by a control voltage.