APPARATUS FOR CONTROLLING TEMPERATURE OF FACILITIES FOR MEASURING EXCESSIVE VOLUME OF SEMICONDUCTOR

摘要

PURPOSE: An apparatus for controlling temperature of facilities for measuring excessive volume of semiconductor is provided to obtain various information regarding deep level defects existing inside nitrogen compounds, i.e., GaN, so that a wide range of temperature modification is possible. CONSTITUTION: An apparatus for controlling temperature of facilities for measuring excessive volume of semiconductor comprises: an external case; a sample-upholding barrel; a band heater; internal/external cylinders; a thermal band established in contact with the top surface of the sample-upholding barrel; and a cover. In the external case, the top is open, has a space of a constant volume inside, and has a vacuum effusing hole at a side of the bottom. The sample-upholding barrel is installed inside the external case for upholding a sample. The band heater closely established outside the sample-upholding barrel heats the sample-upholding barrel. The internal/external cylinders installed in the lower part of the sample-upholding barrel, has cooling gas flow in/out. The cover is installed at a upper side of the external case.