FABRICATION METHOD OF CAPACITOR FOR SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A fabrication method of capacitor for semiconductor memory device is provided to increase the effective area for a lower electrode and prevent the degradation of a dielectric film. CONSTITUTION: A fabrication method of capacitor for semiconductor memory device comprises steps of: selectively etching an insulation film to form a contact hole and forming a polysilicon plug within the contact hole; forming an insulation film on overall structure and selectively etching the insulation film to form a trench exposing the plug; forming a bonding film on the bottom of the trench; forming a level dielectric film on the bonding film and the side wall of the trench; forming a lower electrode on the level dielectric film; forming a dielectric film; and forming an upper electrode.