METHOD FOR MANUFACTURING CAPACITOR OF MEMORY DEVICE

摘要

PURPOSE: A capacitor manufacturing method of a memory device is to form a diffusion prevention film with an excellent heat stableness for preventing a capacitor from degrading due to an oxidation of a barrier metal. CONSTITUTION: A method for fabricating a capacitor of a memory device comprises the steps of: forming a contact plug for a vertical interconnection; forming a barrier metal layer(205) on the contact plug; forming a lower electrode layer(206) on the barrier metal layer; forming a lower electrode pattern by etching the lower electrode layer and the barrier metal layer; depositing an insulating film(202) on the substrate whole surface with the lower electrode layer formed thereon by a high density plasma chemical vapor deposition method; wet etching the insulating film so that sidewalls of at least the barrier metal layer are coated; and depositing a (Ba,Sr)TiO3 dielectric(208) and an upper electrode(209).