METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve the capacitance of the capacitor by enlarging the surface volume of an electrode. CONSTITUTION: A contact hole(C) is formed on an inter layer insulation film(12) formed on a semiconductor substrate(11). A first poly silicon film(14) formed with an anti reflection film(15) is deposited on the inter layer insulation film(12). A photoresist pattern(16) is formed on the anti reflection film(15). Then, the first poly silicon film(14) is etched. A second poly silicon film(18) for a polymer spacer(17) is formed on the upper portion of the structure. By etching the second poly silicon film(18), the polymer spacers(17) are formed. After removing the polymer spacers(17), a dielectric film(19) and a third poly silicon film(20) are sequentially formed on the structure.