| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermo-electric conversion module consisting of a thermo- electric semiconductor mainly composed of CoSb3 which may be used under the intermediate temperature range of 300 to 500 deg.C to assure high thermo-electric conversion efficiency. SOLUTION: On the occasion of forming electrode layers 5 at both end faces provided opposed with each other at least of a pair of P-type and n-type thermo- electric elements 2p, 2n, a metal or an alloy mainly composed of Al is formed as a thick film by the spraying is formed to the end faces of the p-type and n-type thermo-electric elements 2p, 2n consisting of the thermo-electric semiconductor mainly composed of CoSb3. As a result, a thermo-electric conversion module 6 can be obtained in which the thermo-electric elements 20, 2n is a thermo-electric semiconductor mainly consisting of CoSb3, and the electrode layer 5 is mainly composed of Al and includes the film in the thickness of 0.05 mm or more and 1.0 mm or less.
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