| 摘要 |
PROBLEM TO BE SOLVED: To obtain a silicon carbide sintered compact having high density, containing small amounts of organic and inorganic impurities existing on the surface or in the vicinity of the surface. SOLUTION: This silicon carbide sintered compact contains <1.0×1011 atom/cm2 impurities existing on the surface or in the vicinity of the surface of the silicon carbide sintered compact and has >=2.9 g/cm2 density and <=10 ppm total content of impurity element. The silicon carbide sintered compact is obtained by a method comprising a sintering process for hot-pressing a mixture of silicon carbide powder and a nonmetallic sintering auxiliary at 2,000-2,400 deg.C under 300-700 kg/cm2 in a nonoxidizing atmosphere and a cleaning process for cleaning the silicon carbide sintered compact having passed the sintering process by a wet process. |
